Title:
NITRIDE SEMICONDUCTOR LASER DEVICE AND ITS PRODUCTION PROCESS
Document Type and Number:
Japanese Patent JP2008258456
Kind Code:
A
Abstract:
To provide highly reliable nitride semiconductor laser with low resistance.
A buried layer is formed by selective growth, and the structure of a p-type clad layer has an inverse trapezoidal shape, so that the resistance of the p-type clad layer and the resistance of the p-type contact layer can be reduced. Moreover, as for the long term reliability of the element, the buried layer is made as a high resistance half-isolation layer, so that the multiplication of a leak current can be restricted.
Inventors:
TSUCHIYA TOMONOBU
TANAKA SHIGEHISA
TERANO AKIHISA
TANAKA SHIGEHISA
TERANO AKIHISA
Application Number:
JP2007100031A
Publication Date:
October 23, 2008
Filing Date:
April 06, 2007
Export Citation:
Assignee:
OPNEXT JAPAN INC
International Classes:
H01S5/223; H01S5/227; H01S5/343
Domestic Patent References:
| JP2000353669A | 2000-12-19 | |||
| JP2000156524A | 2000-06-06 | |||
| JP2003179314A | 2003-06-27 | |||
| JP2004006934A | 2004-01-08 | |||
| JP2000353669A | 2000-12-19 | |||
| JP2000156524A | 2000-06-06 | |||
| JP2006513122A | 2006-04-20 | |||
| JP2005306723A | 2005-11-04 | |||
| JPH1093198A | 1998-04-10 | |||
| JP2000294883A | 2000-10-20 | |||
| JP2006093683A | 2006-04-06 | |||
| JP2006229210A | 2006-08-31 |
Attorney, Agent or Firm:
Manabu Inoue