To provide a small-sized green color semiconductor laser element of compact design that has been realized using a single chip.

In a nitride semiconductor laser element, a photonic crystal region 21 and a rare earth doped region 22 are formed within an InGaN active layer 14. The photonic crystal region 21 and rare earth doped region in the active layer 14 are formed adjacently in each other along one front surface. The photonic crystal region 21 is formed as a first pattern along one front surface of the active layer 14 and includes a plurality of grooves 23 arranged in parallel keeping an interval in accordance with the wavelength of the excited laser beam. The rare earth doped region 22 includes, as a second pattern, a plurality of grooves 24 arranged in parallel keeping an interval in accordance with the wavelength of the output green laser beam.