To provide a nitride semiconductor light emitting device improved in emission efficiency, and its manufacturing device.
On a substrate, n-type semiconductor layer is formed, and active layer is formed on the above n-type semiconductor layer so that at least one part region of the above semiconductor layer can be exposed, and a p-type semiconductor layer is formed on the above active layer. High concentration p-type semiconductor layer is formed on the above p-type semiconductor layer, and high concentration n-type semiconductor layer is formed by implanting an ion of n-type dopant to at least one part region of the above high concentration p-type semiconductor layer. They are accomplished in reversal direction bias tunnel junction with respect to one part region of the above high concentration p-type semiconductor layer which remains at lower part. Upper part n-type semiconductor layer is formed on the above high concentration n-type semiconductor layer, therefore lateral current spreading is possible. The emission efficiency can be improved by utilizing reversal direction bias tunnel junction and/or lateral current spreading effect.
YANG KEE JEONG
GO HOGEN
PARK JIN SUB
KIM YOUNG HOON
Masakazu Ito
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