Title:
窒化物半導体発光素子
Document Type and Number:
Japanese Patent JPWO2015111134
Kind Code:
A1
Abstract:
サファイア基板と、前記サファイア基板上に形成された複数の窒化物半導体層を有する発光素子構造部を備えてなり、前記サファイア基板を通して前記発光素子構造部からの発光を素子外部に出力する、平面視形状が正方形または長方形のチップに分割された裏面出射型の窒化物半導体発光素子であって、前記サファイア基板の厚さが、前記チップの前記平面視形状の各辺の平均長の０．４５倍以上１倍以下である。
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Inventors:
Plain light
Pernod Cyril
Tetsuhiko Inazu
Pernod Cyril
Tetsuhiko Inazu
Application Number:
JP2015558622A
Publication Date:
March 23, 2017
Filing Date:
January 21, 2014
Export Citation:
Assignee:
Sogaku Scientific Co., Ltd.
International Classes:
H01L33/20; B23K26/06; B23K26/53; H01L33/32
Domestic Patent References:
| JP2008053263A | 2008-03-06 | |||
| JP2002280610A | 2002-09-27 | |||
| JP2009054780A | 2009-03-12 | |||
| JP2008078440A | 2008-04-03 | |||
| JP2005142278A | 2005-06-02 |
Foreign References:
| WO2011007816A1 | 2011-01-20 | |||
| US20130095581A1 | 2013-04-18 |
Other References:
DANIEL A. STEIGERWALD, ET AL.: "“Illumination With Solid State Lighting Technology”", IEEE JOURNAL ON SELECTED TOPICS IN QUANTUM ELECTRONICS, vol. 8, no. 2, JPN6017044199, April 2002 (2002-04-01), pages 310 - 320, ISSN: 0003946307
MAX SHATALOV, ET AL.: "“Large Chip High Power Deep Ultraviolet Light-Emitting Diodes”", APPLIED PHYSICS EXPRESS, JPN7017003745, 2010, pages 1 - 3, ISSN: 0003946308
JAE-HOON LEE, ET AL.: "“Development of Chip Separation Technique for InGaN-Based Light Emitting Diodes”", IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 47, no. 12, JPN6017044201, December 2011 (2011-12-01), pages 1493 - 1498, XP011388543, ISSN: 0003946309, DOI: 10.1109/JQE.2011.2171327
C E LEE, ET AL.: "“High brightness GaN-based flip-chip light-emitting diodes by adopting geometric sapphire shaping s", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 23, no. 025015, JPN7017003746, 2008, pages 1 - 5, ISSN: 0003683299
MAX SHATALOV, ET AL.: "“Large Chip High Power Deep Ultraviolet Light-Emitting Diodes”", APPLIED PHYSICS EXPRESS, JPN7017003745, 2010, pages 1 - 3, ISSN: 0003946308
JAE-HOON LEE, ET AL.: "“Development of Chip Separation Technique for InGaN-Based Light Emitting Diodes”", IEEE JOURNAL OF QUANTUM ELECTRONICS, vol. 47, no. 12, JPN6017044201, December 2011 (2011-12-01), pages 1493 - 1498, XP011388543, ISSN: 0003946309, DOI: 10.1109/JQE.2011.2171327
C E LEE, ET AL.: "“High brightness GaN-based flip-chip light-emitting diodes by adopting geometric sapphire shaping s", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 23, no. 025015, JPN7017003746, 2008, pages 1 - 5, ISSN: 0003683299
Attorney, Agent or Firm:
Yoshifumi Masaki
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