Title:
窒化物半導体発光ダイオード素子の製造方法
Document Type and Number:
Japanese Patent JP4882611
Kind Code:
B2
Inventors:
Hiroaki Murata
Application Number:
JP2006234677A
Publication Date:
February 22, 2012
Filing Date:
August 30, 2006
Export Citation:
Assignee:
Mitsubishi Chemical Corporation
International Classes:
H01L33/20; H01L33/32; H01L33/38; H01L33/40; H01L33/62
Domestic Patent References:
| JP2004088083A | ||||
| JP60094834U | ||||
| JP6260723A | ||||
| JP7106631A | ||||
| JP2005012155A | ||||
| JP11298089A |