To raise the output of a long-wavelength light-emitting element by a method wherein the number of the well layers of the second light-emitting element, which is larger in an In content than the In content of the first light-emitting element of a light-emitting device, of the device is increased more than the number of the well layers of the first light-emitting element provided with an active layer.

A buffer layer 2 consisting of a GaN layer is grown on a substrate 1 and thereafter, an active layer 3 consisting of a multiple quantum well structure (The number of well layers is 3.) formed by stacking a barrier layer + (a well layer + an intermediate layer + a barrier layer) × 3 is grown on the layer 2. In this case, when the barrier layers consisting of a GaN layer, an InGaN layer (The compositional ratio of In is lower than the compositional ratio of In in the well layers.) and the like are grown on the intermediate layers of a high decomposition temperature in a thick film, the crystallizability of the well layers is modified. Accordingly, by growing the active layer consisting of the multiple quantum well structure formed by stacking repeatedly the well layers + the intermediate layers + the battier layers, a long-wavelength element is obtained so that the output of the element improves.