Title:
NITRIDE SEMICONDUCTOR, NITRIDE SEMICONDUCTOR MANUFACTURING METHOD AND ELECTRONIC DEVICE
Document Type and Number:
Japanese Patent JP2019003963
Kind Code:
A
Abstract:
To provide a nitride semiconductor including hetero junction which can increase a concentration and mobility of a 2DEG.SOLUTION: A nitride semiconductor comprises on a substrate 101, a laminate structure in which at least buffer layers 105, 106, a channel layer 108 composed of GaN and a barrier layer 109 forming hetero junction with the channel layer 108 are laminated in this order. The barrier layer 109 is composed of AlInGaAsPN(where 0≤α≤1, 0≤β≤1, α+β≤1, 0≤γ<1, 0≤δ<1, γ+δ<1). In the lamination structure, adjacent regions 190a, 190b which are adjacent to and within 200 nm from the barrier layer 109 concerning the barrier layer 109 and the lamination direction have a C concentration equal to or less than 1.0×10cm.SELECTED DRAWING: Figure 1
Inventors:
OGAWA ATSUSHI
TOZAKI MANABU
OKAZAKI MAI
FUJISHIGE YOSUKE
KINOSHITA TAKAO
HONDA DAISUKE
TOZAKI MANABU
OKAZAKI MAI
FUJISHIGE YOSUKE
KINOSHITA TAKAO
HONDA DAISUKE
Application Number:
JP2015217623A
Publication Date:
January 10, 2019
Filing Date:
November 05, 2015
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L21/338; H01L21/205; H01L21/336; H01L29/778; H01L29/78; H01L29/812
Attorney, Agent or Firm:
Mitsuo Tanaka
Hiroshi Yamazaki
Etsuko Isoe
Toshiyuki Yamazaki
Yukinori Nakakura
Hiroshi Yamazaki
Etsuko Isoe
Toshiyuki Yamazaki
Yukinori Nakakura