Title:
【発明の名称】タングステン―チタンのスパッタリングターゲットの製造方法
Document Type and Number:
Japanese Patent JP3103359
Kind Code:
B2
Abstract:
Tungsten-titanium sputtering targets with improved characteristics are made from high-purity tungsten powder and a second powder consisting of high-purity titanium hydride powder or high-purity titanium hydride powder and high-purity titanium powder. The second powder contains at least 5%, preferably 25% to 100% by weight of titanium hydride powder. A powder mixture having a binodal particle size distribution with respect to the tungsten and second powders is placed under a containment pressure in a die. The die is heated in a vacuum hot-press chamber to a temperature sufficient to dehydride the titanium hydride, and to remove gases and alkali metals. The die is then heated to a second temperature in the range of 1350 to 1550C while maintaining the containment pressure and vacuum. A compaction force in the range of 2000 to 5000 psi is then applied to form a compact. The compaction force and vacuum are subsequently released and the compact is cooled. The compact is easily machined to give a sputtering target having a density of at least 95%, preferably, at least 100% of theoretical density, a total gas content of less than 850 ppm, a carbon content of less than 100 ppm and low particulates upon sputtering.
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Inventors:
John A. Dunlop
Hans Lencing
Hans Lencing
Application Number:
JP13899589A
Publication Date:
October 30, 2000
Filing Date:
May 31, 1989
Export Citation:
Assignee:
Johnson Mathey Incorporated
International Classes:
B22F3/00; B22F5/00; C22C1/04; C23C14/34; (IPC1-7): C23C14/34; B22F5/00; C22C1/04
Domestic Patent References:
| JP63303017A |
Attorney, Agent or Firm:
Akira Asamura (2 outside)