Title:
NON-VOLATILE FERROELECTRIC MEMORY AND DRIVING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP3847933
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a non-volatile ferroelectric memory that is constituted of a transister having one operation memory cell and one ferroelectric capacitor, and a driving method therefor.
SOLUTION: In the non-volatile ferroelectric memory, memory cells are linked between bit lines BL0 and BL1 and each constituted of an access transistor 301 and a ferroelectric capacitor 302. A first electrode of the access transistor 301 is linked t the first bit line BL0, a second electrode to one end of the ferroelectric capacitor 302 and a gate is linked to a word line WL. The other end of the ferroelectric capacitor 302 is linked to the second bit line BL1. In the reading/writing operation, the word line WL is made active, a data signal is inputted into or outputted to any one predetermined out of the first bit line BL0 and the second bit line BL1 and a plate voltage is applied to the rest thereof.
Inventors:
Chung Zhen
Takichi
Takichi
Application Number:
JP36314797A
Publication Date:
November 22, 2006
Filing Date:
December 15, 1997
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
G11C11/22; G11C14/00; G11C11/21; H01L21/8242; H01L21/8246; H01L21/8247; H01L27/10; H01L27/105; H01L27/108; H01L29/788; H01L29/792; (IPC1-7): G11C14/00; G11C11/22; H01L27/10; H01L27/108; H01L21/8242; H01L21/8247; H01L29/788; H01L29/792
Domestic Patent References:
| JP5075072A |
Attorney, Agent or Firm:
Yasunori Otsuka
Kenichi Matsumoto
Kenichi Matsumoto