Title:
一つのスイッチング素子と一つの抵抗体とを含む不揮発性メモリ装置およびその製造方法
Document Type and Number:
Japanese Patent JP4511249
Kind Code:
B2
Abstract:
A nonvolatile memory device comprises a substrate, a switching device and a data storage unit connected to the switching device. The data storage unit includes a data storage material layer in the form of a transition metal oxide layer having different resistance characteristics in different voltage ranges. The data storage material layer has a first resistance when a write voltage V W1 , 0
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Inventors:
Xu Jun love
Torayu Yanagi Kei
Lee Ming
Park Play
Torayu Yanagi Kei
Lee Ming
Park Play
Application Number:
JP2004164659A
Publication Date:
July 28, 2010
Filing Date:
June 02, 2004
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO.,LTD.
International Classes:
G11C13/00; H01L27/10; G11C11/15; H01L27/24; H01L45/00
Domestic Patent References:
| JP6509909A | ||||
| JP2058264A | ||||
| JP2002537627A |
Foreign References:
| WO2003028124A1 |
Attorney, Agent or Firm:
Mikio Hatta
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Toshifumi Fujii
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Toshifumi Fujii