Title:
垂直ナノチューブを利用した不揮発性メモリ素子
Document Type and Number:
Japanese Patent JP4047797
Kind Code:
B2
Abstract:
A nonvolatile memory device utilizing a vertical nanotube is provided. The memory device includes a substrate having a source region; a nanotube array, which is composed of a plurality of nanotube columns which are vertically grown on the substrate such that one end of the nanotube array is in contact with the source region, thereby functioning as an electron transport channel; a memory cell, which is formed around an outer side surface of the nanotube array; a control gate, which is formed around an outer side surface of the memory cell; and a drain region, which is in contact with the other end of the nanotube array.
Inventors:
Choi phoenix
Lee trillion far
Ginger Tiger Kei
Gold reconnaissance rain
Lee trillion far
Ginger Tiger Kei
Gold reconnaissance rain
Application Number:
JP2003384459A
Publication Date:
February 13, 2008
Filing Date:
November 14, 2003
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L21/8247; G11C8/02; G11C13/02; G11C16/04; H01L27/115; H01L29/02; H01L29/06; H01L29/788; H01L29/792; H01L51/30
Domestic Patent References:
| JP8078635A | ||||
| JP7235649A | ||||
| JP2002110977A | ||||
| JP2001020072A | ||||
| JP2001077219A | ||||
| JP8078769A |
Attorney, Agent or Firm:
Isono Dozo