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Title:
スケーラブルな2端子ナノチューブスイッチを有する、不揮発性抵抗変化メモリ、ラッチ回路、および動作回路
Document Type and Number:
Japanese Patent JP5394923
Kind Code:
B2
Abstract:
A non-volatile resistive memory is provided. The memory includes at least one non-volatile memory cell and selection circuitry. Each memory cell has a two-terminal nanotube switching device having and a nanotube fabric article disposed between and in electrical communication with conductive terminals. Selection circuitry is operable to select the two-terminal nanotube switching device for read and write operations. Write control circuitry, responsive to a control signal, supplies write signals to a selected memory cell to induce a change in the resistance of the nanotube fabric article, the resistance corresponding to an informational state of the memory cell. Resistance sensing circuitry in communication with a selected memory cell, senses the resistance of the nanotubc fabric article and provides the control signal to the write control circuitry. Read circuitry reads the corresponding informational state of the memory cell. A non-volatile latch circuit and a non-volatile register file configuration circuit for use with a plurality of non-volatile register files are also provided.

Inventors:
Birchin, Claude, Elle.
Luke, Thomas
Ward, Jonathan and W.
Frank, Guo
Consec, Stephen, Elle.
Main hold, mitchell
Application Number:
JP2009523985A
Publication Date:
January 22, 2014
Filing Date:
August 08, 2007
Export Citation:
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Assignee:
Nantero, ink.
International Classes:
H03K3/356; G11C13/00; H01L27/10; H01L45/00; H01L49/00
Domestic Patent References:
JP2005502201A
JP2007502545A
JP2001016095A
JP4212796A
JP7029373A
JP2005503007A
JP2005524000A
JP2008541458A
Foreign References:
WO2005041204A1
Other References:
B.Pradhanほか,「Electrical Bistability and Memory Phenomenon in Carbon Nanotube-Conjugated Polymer Matrixes」,THE JOUTRNALOFPHYSICALCHEMISTRY B,米国,American Chemical Society,2006年 4月27日,Vol.110, No.16,pp8274-8277,カーボンナノチューブ
Attorney, Agent or Firm:
Hiroe Associates Patent Office



 
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