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Title:
不揮発性半導体メモリ装置
Document Type and Number:
Japanese Patent JP4566369
Kind Code:
B2
Abstract:
A nonvolatile semiconductor memory device includes a program state detection circuit for checking a state of programmed memory cells. The program state detection circuit checks program pass/fail using data transmitted through a column selection circuit, according to a column address having redundancy information. Therefore, it is possible to overcome the problem that the memory device is regarded as a fail device owing to a defective column.

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Inventors:
Zhaodai He
Jin Xin Thousand
Application Number:
JP2000269304A
Publication Date:
October 20, 2010
Filing Date:
September 05, 2000
Export Citation:
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Assignee:
SAMSUNG ELECTRONICS CO.,LTD.
International Classes:
G01R31/28; G11C16/06; G11C16/02; G11C16/34; G11C29/04
Domestic Patent References:
JP10302489A
JP11176175A
JP3295098A
JP5109292A
JP9274799A
JP6203590A
Attorney, Agent or Firm:
Makoto Hagiwara



 
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