Title:
多数の外部電力供給部を有する不揮発性半導体メモリ
Document Type and Number:
Japanese Patent JP2010518544
Kind Code:
A
Abstract:
A memory device includes core memory such as flash memory for storing data. The memory device includes a first power input to receive a first voltage used to power the flash memory. Additionally, the memory device includes a second power input to receive a second voltage. The memory device includes power management circuitry configured to receive the second voltage and derive one or more internal voltages. The power management circuitry supplies or conveys the internal voltages to the flash memory. The different internal voltages generated by the power management circuitry (e.g., voltage converter circuit) and supplied to the core memory enable operations such as read/program/erase with respect to cells in the core memory.
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Inventors:
Jin-Ki Kim
Peter Gillingham
Peter Gillingham
Application Number:
JP2009549344A
Publication Date:
May 27, 2010
Filing Date:
February 12, 2008
Export Citation:
Assignee:
Mosside Technologies, Inc.
International Classes:
G11C16/06; G11C16/04
Domestic Patent References:
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| JPH09154274A | 1997-06-10 | |||
| JP2004152484A | 2004-05-27 | |||
| JPH10149688A | 1998-06-02 | |||
| JPH11297090A | 1999-10-29 | |||
| JP2004047094A | 2004-02-12 | |||
| JPH07231647A | 1995-08-29 | |||
| JP2003288790A | 2003-10-10 | |||
| JPS63268193A | 1988-11-04 | |||
| JPH11273379A | 1999-10-08 | |||
| JPH0729386A | 1995-01-31 | |||
| JPH07235193A | 1995-09-05 | |||
| JP2000222895A | 2000-08-11 | |||
| JP2002217318A | 2002-08-02 | |||
| JP2007042265A | 2007-02-15 | |||
| JP2003223791A | 2003-08-08 | |||
| JP2006209949A | 2006-08-10 |
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| WO2006124122A2 | 2006-11-23 | |||
| WO2006124122A2 | 2006-11-23 |
Attorney, Agent or Firm:
Yasuhiko Murayama
Masatake Shiga
Takashi Watanabe
Keiji Kiuchi
Masatake Shiga
Takashi Watanabe
Keiji Kiuchi