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Title:
NON-VOLATILE SEMICONDUCTOR MEMORY
Document Type and Number:
Japanese Patent JP2002279787
Kind Code:
A
Abstract:

To solve such a problem that read and write cycles of a memory cell takes double time when a memory cell in which two bits/cell is stored is used and to provide a peripheral control circuit having memory array constitution in which area can be reduced.

Each memory is connected through a common bit line in which two cells are a drain or a source, and a memory array is constituted by arranging a plurality of unit memory arrays of this two cells. And write or read can be performed by simultaneous one time access for a plurality of bites by replacing bit arrangement of a memory cell array by a write method or a read method. Also, operation speed is increased by providing a sensor amplifier which is not pre-charged as further increasing read speed.


Inventors:
YAMAZOE TAKANORI
YOSHIKI HIROSHI
KAMIGAKI YOSHIAKI
KATAYAMA KOZO
MINAMI SHINICHI
KANAI TAKEO
Application Number:
JP2001075367A
Publication Date:
September 27, 2002
Filing Date:
March 16, 2001
Export Citation:
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Assignee:
HITACHI LTD
HITACHI ULSI SYS CO LTD
International Classes:
G06K19/07; G11C11/56; G11C16/04; G11C16/06; G11C16/02; G11C16/10; G11C16/26; (IPC1-7): G11C16/02; G06K19/07; G11C16/04; G11C16/06
Attorney, Agent or Firm:
Sakuta Yasuo