Title:
不揮発性半導体記憶装置
Document Type and Number:
Japanese Patent JP5269010
Kind Code:
B2
Abstract:
A nonvolatile semiconductor storage device according to an embodiment includes a first line; a second line that intersects the first line; and a memory cell that includes a memory element and a non-ohmic element, the memory cell being provided at the intersection of the first line and the second line while the memory element and the non-ohmic element are series-connected, data being stored in the memory element according to a change of a resistance state, wherein the non-ohmic element includes a metallic layer, an intrinsic semiconductor layer that is joined to the metallic layer, and a doped semiconductor layer that is joined to the intrinsic semiconductor layer and contains a first dopant.
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Inventors:
Takeshi Sonehara
Application Number:
JP2010182403A
Publication Date:
August 21, 2013
Filing Date:
August 17, 2010
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L27/105; H01L29/47; H01L29/872; H01L45/00; H01L49/00
Domestic Patent References:
| JP2004281497A | ||||
| JP2009038378A |
Attorney, Agent or Firm:
Kisaragi International Patent Business Corporation