Title:
不揮発性記憶装置及びその駆動方法
Document Type and Number:
Japanese Patent JP4880101
Kind Code:
B1
Abstract:
A method for programming a nonvolatile memory device according to the present invention includes a step of detecting an excessively low resistance cell from among a plurality of memory cells (11) (S101); a step of changing the resistance value of a load resistor (121) to a second resistance value smaller than a first resistance value (S103); and a step of causing, by applying a voltage pulse to a series circuit including the excessively low resistance cell and the load resistor (121) having the second resistance value, a variable resistance element (105) included in the excessively low resistance cell to shift to a second high resistance state having a resistance value greater than that of the first low resistance state (S104).
Inventors:
Mitsuteru Iijima
Tsuyoshi Takagi
Koji Katayama
Tsuyoshi Takagi
Koji Katayama
Application Number:
JP2011539840A
Publication Date:
February 22, 2012
Filing Date:
June 28, 2011
Export Citation:
Assignee:
Panasonic Corporation
International Classes:
G11C13/00; H01L27/10; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| JP2010020811A | 2010-01-28 |
Foreign References:
| WO2010140296A1 | 2010-12-09 | |||
| WO2011004448A1 | 2011-01-13 |
Attorney, Agent or Firm:
Hiromori Arai