Title:
不揮発性記憶素子および不揮発性記憶装置
Document Type and Number:
Japanese Patent JP5351363
Kind Code:
B1
Abstract:
A variable resistance nonvolatile memory element includes a first electrode, a second electrode, and a variable resistance layer including: a first oxide layer including a metal oxide having non-stoichiometric composition and including p-type carriers; a second oxide layer located between and in contact with the first oxide layer and a second electrode and including a metal oxide having non-stoichiometric composition and including n-type carriers; an oxygen reservoir region located in the first oxide layer, having no contact with the first electrode, and having an oxygen content atomic percentage higher than that of the first oxide layer; and a local region located in the second oxide layer, having contact with the oxygen reservoir region, and having an oxygen content atomic percentage lower than that of the second oxide layer.
Inventors:
Wei Zhiqiang
Tsuyoshi Takagi
Koji Katayama
Tsuyoshi Takagi
Koji Katayama
Application Number:
JP2013527214A
Publication Date:
November 27, 2013
Filing Date:
October 22, 2012
Export Citation:
Assignee:
Panasonic Corporation
International Classes:
H01L27/105; G11C13/00; H01L45/00; H01L49/00
Domestic Patent References:
| JP2009164580A | ||||
| JP2010135541A |
Foreign References:
| WO2006075574A1 | ||||
| WO2007026509A1 | ||||
| WO2010143414A1 |
Attorney, Agent or Firm:
Hiromori Arai