To provide a nonlinear optical effect element having a minute area and an electro-optical effect element which can operate in visible and UV ray region.
This nonlinear optical effect element uses a semiconductor quantum well structure and the semiconductor is a III-V group compd. semiconductor expressed by formula InxGayAlzN (wherein x+y+z=1, 0≤x≤1, 0≤y≤1, and 0≤z≤1). Layers of the III-V compd. semiconductor are deposited in the direction of the polar axis in such a manner that >0.5% lattice strain is present between the quantum well layer and a barrier layer. The electro-optical effect element is produced by further forming electrodes on the nonlinear optical effect element to apply an electric field in the direction perpendicular to the laminated layers.
ONO YOSHINOBU
TAKADA TOMOYUKI
