Title:
NONLINEAR OPTICAL ELEMENT
Document Type and Number:
Japanese Patent JPH05249512
Kind Code:
A
Abstract:
PURPOSE:To enable the control of lateral asymmetry by impressed bias to be conducted by laterally confining the secondary electron gas in an electron well, thereby forming a quantum dot structure. CONSTITUTION:The quantum dot D when a voltage Vg=0 is impressed to an electrode 11 has the symmetrical lateral structure in which a small depletion region 12 spreads symmetrically around a dot confinement region 10. The bias electric field generated by the voltage Vg forms the asymmetrically spreading depletion region 12 when the voltage Vg=0 is impressed to the electrode 11 and therefore, lateral asymmetry is given to the dot D. In actuality, an array consisting of plural pieces of such quantum dots is used. Namely, five pieces of the quantum dots D1 to D5 are defined by the confinement region. Two pieces of the gate electrodes 13, 14 are provided around both halves facing each other of the well and the symmetrical quantum dots are formed when V1=V2. The quantum dots are provided with the asymmetry when V1=V2.
Inventors:
JIEREMI ARAMU
MATEIASU WAGUNA
MATEIASU WAGUNA
Application Number:
JP32316192A
Publication Date:
September 28, 1993
Filing Date:
December 02, 1992
Export Citation:
Assignee:
HITACHI LTD
International Classes:
G01M11/00; G02F1/35; G02F1/355; G02F1/017; G02F1/377; G02F3/02; (IPC1-7): G02F1/35; G01M11/00
Attorney, Agent or Firm:
Kazuko Tomita