Title:
NONVOLATILE MEMORY DEVICE AND DRIVING METHOD
Document Type and Number:
Japanese Patent JP2010177387
Kind Code:
A
Abstract:
To provide a nonvolatile memory device capable of efficiently applying a voltage for high resistance to a resistance change element.
The nonvolatile memory device has a memory cell 300 formed by connecting a resistance change element 309 consisting of a lower electrode 309a, an upper electrode 309c, and a resistance change layer 309b reversibly changing based on electric signals having different polarities and provided between both electrodes, and to a transistor 317 in series. Data is written by applying electric potential from a substrate to the lower electrode 309a through a diode consisting of an N well and a P-type diffusion layer 302b, and applying an electric potential from a bit line BL0 to the upper electrode 309c.
Inventors:
IIJIMA MITSUTERU
KANZAWA YOSHIHIKO
MURAOKA SHUNSAKU
TAKAGI TAKESHI
KANZAWA YOSHIHIKO
MURAOKA SHUNSAKU
TAKAGI TAKESHI
Application Number:
JP2009017351A
Publication Date:
August 12, 2010
Filing Date:
January 28, 2009
Export Citation:
Assignee:
PANASONIC CORP
International Classes:
H01L27/10; G11C13/00; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Hiromori Arai
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