PURPOSE: To provide an electronic/electric nonvolatile memory which can be manufactured with a high density, and by which the state can be stored by a large capacity change, manufacture by which the number of state switching enabling times can be increased, and a memory reading circuit which can easily read the state.

CONSTITUTION: A fixed electrode 17 is provided at the inside face of a glass cover 15 which contains a thin film bridge 13 so as to be opposed to the thin film bridge. The thin film bridge is bended upwards and downwards by a voltage impressed on the fixed electrode and the thin film bridge in order to switch the state. The thin film bridge is formed by using the oxide film of an epitaxial growth layer formed on an Si substrate 11 made of (110)wafer, and an anisotropic etching. The state of the nonvolatile memory can be read by the compared result of the level of alternating signals inputted through capacitances between the thin film bridge and the fixed electrode, and between the thin film bridge and the substrate.