Title:
NONVOLATILE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JPH08213572
Kind Code:
A
Abstract:
PURPOSE: To provide a nonvolatile semiconductor memory device and manufacturing method thereof which can display different functions without troubles.
CONSTITUTION: A memory cell array is divided into first and second blocks. In a first type memory cell 14 of the first block, a cap 28 formed on a floating gate 26 is short and the gate couple ratio of the cell 14 is low, and it has mask ROM-like characteristics. In a second type memory cell of the second block, the cap is long, the gate couple ratio of this cell is high and it is excellent in programability.
Inventors:
TAKEUCHI NOBUYOSHI
Application Number:
JP28199995A
Publication Date:
August 20, 1996
Filing Date:
October 30, 1995
Export Citation:
Assignee:
NIPPON KOKAN KK
International Classes:
H01L21/8247; H01L27/115; H01L29/423; H01L29/788; H01L29/792; (IPC1-7): H01L27/115; H01L21/8247; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Hasegawa chord