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Title:
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
Japanese Patent JP2011066149
Kind Code:
A
Abstract:

To improve characteristics of a nonvolatile semiconductor memory device.

The nonvolatile semiconductor memory device includes: a plurality of first wiring lines and a plurality of second wiring lines which cross each other; and a plurality of memory cells disposed at respective intersections of the first wiring lines and second wiring lines. The plurality of memory cells each includes a rectifying element connected to a first wiring line, a lower electrode formed on the rectifying element, a variable resistance element formed on the lower electrode, and an upper electrode formed on the variable resistance element and connected to a second wiring line, parts of rectifying elements of the plurality of memory cells adjoining each other in a first wiring line direction being connected.


Inventors:
ENDO MASATO
NOGUCHI MITSUHIRO
Application Number:
JP2009000214806
Publication Date:
March 31, 2011
Filing Date:
September 16, 2009
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01L27/10; G11C13/00; H01L45/00; H01L49/00
Attorney, Agent or Firm:
蔵田 昌俊
河野 哲
中村 誠
福原 淑弘
峰 隆司
白根 俊郎
村松 貞男
野河 信久
幸長 保次郎
河野 直樹
砂川 克
勝村 紘
河井 将次
佐藤 立志
岡田 貴志
堀内 美保子
竹内 将訓
市原 卓三
山下 元



 
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