To improve characteristics of a nonvolatile semiconductor memory device.
The nonvolatile semiconductor memory device includes: a plurality of first wiring lines and a plurality of second wiring lines which cross each other; and a plurality of memory cells disposed at respective intersections of the first wiring lines and second wiring lines. The plurality of memory cells each includes a rectifying element connected to a first wiring line, a lower electrode formed on the rectifying element, a variable resistance element formed on the lower electrode, and an upper electrode formed on the variable resistance element and connected to a second wiring line, parts of rectifying elements of the plurality of memory cells adjoining each other in a first wiring line direction being connected.
NOGUCHI MITSUHIRO
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Katsumura Hiro
Shoji Kawai
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takuzo Ichihara
Yamashita Gen