Title:
Nonvolatile semiconductor memory
Document Type and Number:
Japanese Patent JP5908389
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an inexpensive nonvolatile semiconductor storage device having high reliability.SOLUTION: In a nonvolatile semiconductor storage device, memory strings include: a semiconductor layer having a pair of pillar parts each extending in a vertical direction with respect to a substrate and a connection part formed to connect bottoms of the pair of pillar parts; a charge storage layer formed to surround lateral faces of the pillar parts; a first insulation film including the lateral faces of the pillar parts and the charge storage layer; a first conductive layer formed to cover the lateral faces of the pillar parts and the first insulation film; a second insulation film formed around the connection part; and a second conductive layer formed on the connection part via a gate insulation film.
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Inventors:
Fukuzumi Yoshiaki
Hideaki Aochi
Ryuta Katsumata
Kito Jie
Kito Dai
Kei'an Tanaka
Yousuke Komori
Megumi Ishizuki
Hideaki Aochi
Ryuta Katsumata
Kito Jie
Kito Dai
Kei'an Tanaka
Yousuke Komori
Megumi Ishizuki
Application Number:
JP2012251671A
Publication Date:
April 26, 2016
Filing Date:
November 15, 2012
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/8247; H01L21/336; H01L27/115; H01L29/788; H01L29/792
Domestic Patent References:
| JP2007317874A | ||||
| JP6338602A | ||||
| JP10093083A | ||||
| JP2003092366A |
Attorney, Agent or Firm:
Kisaragi International Patent Business Corporation