PURPOSE: To obtain an electrically programmable nonvolatile semiconductor memory having a highly reliable thin insulting layer by forming the layer, subjected to dielectric breakdown upon application of voltage, of a single layer oxynitride film.
CONSTITUTION: In a nonvolatile semiconductor memory to be electrically written having a first electrode 4 made of a pair of impurity diffused regions for forming a channel in a substrate 1, a floating gate 2 for applying an electric field to its channel, and a second electrode 9 formed to be applied with an external voltage on the electrode 4 through an insulating layer 8 subjected to dielectric breakdown upon application of voltage, the layer 8 is formed of a single layer oxynitride film. For example, the oxynitride film is obtained by permeating and compounding oxygen atoms into the film upon contact of the nitride film with an oxygen atmosphere, and the composition ratio of the film is oxygen rich on the surface, and oxygen composition ratio decreases in the depth direction.
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TANAKA KENICHI
SAKIYAMA KEIZO
