Title:
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURE THEREFOR
Document Type and Number:
Japanese Patent JPH1174387
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To perform the SSI(source side injection) write of high electron injection efficiency and inter-polysilicon tunnel elimination without the problem of excessive elimination. SOLUTION: A floating gate electrode 5 is formed on a position away from a source 2 partially overlapped with a drain 3 through a tunnel oxide film 12 on a channel formation area between the source 2 and the drain 3, and a linear control gate electrode 6 extended in a channel width direction is formed through an insulation film 13 on the floating gate electrode 5. A selection gate electrode 4 insulated from the floating gate electrode 5 through the insulation film 14, insulated from the control gate electrode 6 through the insulation film 16, insulated from a substrate area between the floating gate electrode 5 and the source 2 through a gate oxide film 11, and extended in a channel length direction covering the floating gate electrode 5, the control gate electrode 6 and a selection channel area, is formed. By the insulation films 13 and 14, three gate electrodes 4, 5 and 6 are electrically coupled.
Inventors:
TANAKA MAKOTO
Application Number:
JP34719497A
Publication Date:
March 16, 1999
Filing Date:
December 01, 1997
Export Citation:
Assignee:
RICOH KK
International Classes:
H01L21/8247; H01L27/115; H01L29/788; H01L29/792; (IPC1-7): H01L21/8247; H01L29/788; H01L29/792; H01L27/115
Attorney, Agent or Firm:
Noguchi Shigeo
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