Title:
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2003346484
Kind Code:
A
Abstract:
To provide a nonvolatile semiconductor storage device capable of suppressing variations in the threshold value of a nonvolatile memory.
The nonvolatile semiconductor storage device 100 uses a sense amplifier circuit 22 and a comparator 25 to verify a particular memory cell after applying a write voltage to the memory cell in a memory block MB for a prescribed period at write to the memory cell. When the result of verification indicates deficient write to the memory cell, a memory control circuit 28 instructs rewriting. In this case, the memory control circuit adjusts the write voltage.
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Inventors:
KATO HIROSHI
TATEWAKI YASUHIKO
OISHI TSUKASA
OTANI JUN
TATEWAKI YASUHIKO
OISHI TSUKASA
OTANI JUN
Application Number:
JP2002149193A
Publication Date:
December 05, 2003
Filing Date:
May 23, 2002
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G11C16/02; G11C11/56; G11C16/04; G11C16/06; G11C16/10; G11C16/34; H01L21/8247; H01L27/10; H01L27/115; H01L29/788; H01L29/792; G11C16/24; G11C16/26; G11C16/30; (IPC1-7): G11C16/02; G11C16/04; G11C16/06; H01L21/8247; H01L27/10; H01L27/115; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Hisami Fukami (4 outside)