Title:
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2007018596
Kind Code:
A
Abstract:
To achieve a nonvolatile semiconductor storage device that writes multivalued data accurately at high speed.
Data is written according to a source side injection method using charged charge of capacitance elements (Cda, Cdb) connected to nodes (DLa, DLc) at a drain side of a memory cell. Capacitance values of the capacitance elements (Cda, Cdb) are changed according to values of write data.
Inventors:
Kino, Yusuke
Kono, Takashi
Yamauchi, Tadaaki
Kono, Takashi
Yamauchi, Tadaaki
Application Number:
JP2005000198753
Publication Date:
January 25, 2007
Filing Date:
July 07, 2005
Export Citation:
Assignee:
RENESAS TECHNOLOGY CORP
International Classes:
G11C16/06; G11C16/02