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Title:
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2011014920
Kind Code:
A
Abstract:

To provide a nonvolatile semiconductor storage device having high-performance write/delete properties.

A selection gate 18 is formed on a p-type well 2 of a semiconductor substrate via a gate insulating film 6. A memory gate 17 is formed on the p-type well 2 via a laminated film 15 composed of a silicon oxide film 15a, a silicon nitride film 15b, and a silicon oxide film 15c. The memory gate 17 is adjacent to the selection gate 18 via the laminated film 15. In regions on both sides of the selection gate 18 and the memory gate 17 in the p-type well 2, n-type impurity diffusion layers 20 and 21 serving as the source and the drain are formed. In the channel region positioned between the impurity diffusion layers 20 and 21, the charge concentration of the impurity differs between an area 51 controllable by the selection gate 18 and an area 52 controllable by the memory gate 17.


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Inventors:
HISAMOTO MASARU
KIMURA SHINICHIRO
YASUI KAN
MATSUZAKI NOZOMI
Application Number:
JP2010192367A
Publication Date:
January 20, 2011
Filing Date:
August 30, 2010
Export Citation:
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Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L29/792; H01L21/8247; H01L27/10; H01L27/115; H01L29/788
Domestic Patent References:
JP2001102466A2001-04-13
JP2002170891A2002-06-14
JP2002298591A2002-10-11
JPH1174389A1999-03-16
JPH0582798A1993-04-02
JPH0354869A1991-03-08
JP2000049244A2000-02-18
Attorney, Agent or Firm:
Yamato Tsutsui



 
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