Title:
NONVOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2022112985
Kind Code:
A
Abstract:
To provide a nonvolatile storage device capable of realizing high performance.SOLUTION: A nonvolatile storage device comprises a first electrode, a memory material layer, a second electrode, and a first buffer layer. The memory material layer includes a first element and is provided on the first electrode. The second electrode is provided on the memory material layer. The first buffer layer is provided between the memory material layer and the second electrode. Segregation of the first element in the first buffer layer is lower than segregation of the first element in the second electrode.SELECTED DRAWING: Figure 2
Inventors:
SUMINO JUN
ARAYA KATSUHISA
SONE TAKESHI
MIZUGUCHI TETSUYA
ARAYA KATSUHISA
SONE TAKESHI
MIZUGUCHI TETSUYA
Application Number:
JP2021009054A
Publication Date:
August 03, 2022
Filing Date:
January 22, 2021
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP
International Classes:
H01L21/8239; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Patent Attorney Corporation Tsubasa International Patent Office