NORBORNENE COPOLYMER FOR PHOTORESIST, METHOD FOR PRODUCING THE SAME AND PHOTORESIST COMPOSITION CONTAINING THE SAME

Title:

NORBORNENE COPOLYMER FOR PHOTORESIST, METHOD FOR PRODUCING THE SAME AND PHOTORESIST COMPOSITION CONTAINING THE SAME

Document Type and Number:

Japanese Patent JP2002348333

Kind Code:

A

Abstract:

To provide a norbornene copolymer for a photoresist which has transparency, high sensitivity, high resolution and etching resistance in order to be suitable for fine fabricating ultrahigh integrated semiconductor by excimer laser; a method for producing the same; and a photoresist composition containing the same.

The norbornene copolymer for a photoresist comprises being represented by formula 1.

Inventors:

SHIN JUNG HAN
MOON BONG SEOK
HAN OUCK
YIM JIN HEONG
HAN EUN SIL

Application Number:

JP2002119638A

Publication Date:

December 04, 2002

Filing Date:

April 22, 2002

Export Citation:

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Assignee:

SAMSUNG ELECTRONICS CO LTD

International Classes:

C08F4/26; C08F8/00; C08F232/00; G03F7/039; H01L21/027; G03F7/004; (IPC1-7): C08F232/00; C08F4/26; C08F8/00; G03F7/039; H01L21/027

Attorney, Agent or Firm:

Mikio Hatta (4 outside)

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