PURPOSE: To obtain a resist material superior in sensitivity and resolution and high in dry etching resistance by using a specified copolymer.
CONSTITUTION: The resist material is enhanced in sensitivity by using the copolymer having the repeating units each having high energy sensitive group, such as vinyl or epoxy group, and at the same time, a phenyl structure represented by formula I, and also enhanced in dry etching resistance by incorporating the repeating units of formula II, each having a hetero ring in said copolymer. In formulae I and II, R is vinyl, epoxy, or the like; R1 is H, 1W6C alkyl, or halogen, and R, R1 substitute one of the o, m, and p-positions; each of W, X, Y, and Z is H, halogen, cyano, 1W6C alkyl, haloalkyl, or 6W30C substd. by 1W6C alkyl or haloalkyl, -COOR2, -COR2, or the like, nitro, or hetero ring substd. by H, OH, COOH, halogen, nitro, or the like; and R2 is 6W30C aryl or the like.
AI HIDEO
MIYAO MANABU
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