To provide an observation method of a semiconductor structure capable of observing a structure having large aspect ratio with higher freedom, and to provide an electronic microscope system.
An electronic microscope system comprises an electron microscope optical component 27 creating an image of secondary electron emitted from the semiconductor device 3 located in a visual field 37 of an object to be magnified, on a detection device 35 having a position detecting function; and an irradiation devices 55, 59 for emitting primary energy beams 51, 53, and the observation method of the semiconductor device includes a process of irradiating the primary energy beams 51, 53 at least against the object to be magnified in order to make the semiconductor device 3 emit secondary electron. The semiconductor device 3 has an upper surface with large aspect furnished by a first material 11, and a recess part having a bottom 17 furnished by a second material 13.
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KNIPPELMEYER RAINER
MUELLER INGO
| JP2000277577A | 2000-10-06 | |||
| JPH09320505A | 1997-12-12 | |||
| JP2001076666A | 2001-03-23 |
| WO2001075929A1 | 2001-10-11 |