Title:
C12A7エレクトライドからなる導電性素子材料表面に対するオーミック接合形成方法
Document Type and Number:
Japanese Patent JP5106313
Kind Code:
B2
Abstract:
To form an ohmic surface whose interface has small deterioration even in an atmosphere so as to apply a C12A7 electride to an element such as a cold electron emission source and an organic EL.
In a method of using a 12CaO-7Al2O3electride as a conductive element material and vapor-depositing metal on its surface to form an ohmic junction, an ohmic junction forming method for the surface of the conductive element material made of the C12A7 electride includes: subjecting the surface of the element material to phosphorous acid processing to modify it; and then vapor-depositing the metal on the surface of the element material to control the contact resistance of the interface between the element material surface and the metal to less than 0.5 Ωcm2.
COPYRIGHT: (C)2010,JPO&INPIT
Inventors:
Hideo Hosono
Satoshi Matsuishi
Tojo Kijo
Seong Kim
Masahiro Hirano
Application Number:
JP2008208753A
Publication Date:
December 26, 2012
Filing Date:
August 13, 2008
Assignee:
Japan Science and Technology Agency
International Classes:
H01L21/28; H01J9/02; H01L29/26; H01L37/00; H01L51/50; H05B33/26; C01F7/00
Domestic Patent References:
| JP2005116801A | | | | |
| JP10209072A | | | | |
| JP9064174A | | | | |
| JP2009212520A | | | | |
Other References:
T.Kamiya et al,Field-Induced Current Modulation in Nanoporous Semiconductor, Electron-Doped 12CaO・7Al2O3,Chemistry of Materials,2005年11月 8日,Vol.17, No.25,pp.6311-6316
Attorney, Agent or Firm:
Yoshiyuki Nishi
