Title:
OHMIC CONTACT TESTING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5487073
Kind Code:
A
Abstract:
PURPOSE:To realize the testing method for the ohmic contact to secure the decision of the quality of the ohmic contact with a high sensitivity and with no dangerous probability. CONSTITUTION:The cold air featuring a temperature less than the surface temperature of glass case 1 of tested diode 6 is sprayed to the glass case while applying sufficiently large amount of forward bias current IF to diode 6. In this case, the defective ohmic contact features voltage VF of diode 6 changing instantaneously in the negative direction; while the non-defective one features VF changing instantaneously in the positive direction respectively.
Inventors:
TAMATOSHI KUNIYOSHI
Application Number:
JP15524477A
Publication Date:
July 11, 1979
Filing Date:
December 22, 1977
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01R31/26; H01L21/66; (IPC1-7): G01R31/26; H01L21/66