OHMIC ELECTRODE AND ITS FORMING METHOD, AND LAMINATE FOR FORMING OHMIC ELECTRODE

Title:

OHMIC ELECTRODE AND ITS FORMING METHOD, AND LAMINATE FOR FORMING OHMIC ELECTRODE

Document Type and Number:

Japanese Patent JPH11274468

Kind Code:

A

Abstract:

To realize an ohmic electrode having characteristics which are practically satisfactory for a GaAs-base semiconductor or the like.

A Ni thin film 3 having a thickness of 8 to 30 nm, an In thin film 4 having a thickness of 2 to 6 nm, and a Ge thin film 5 having a thickness of 10 to 50 nm are formed in a predetermined pattern on an n+-type GaAs substrate 1, and then the n+-type GaAs substrate 1 on which the Ni thin film 3, the In thin film 4, and the Ge thin film 5 are formed is subjected to a heat treatment at 300 to 600°C for several seconds to several minutes to form an ohmic electrode having a laminated structure including an n++-type GaAs layer 6 which is further grown from the n+-type GaAs substrate 1, an InGaAs layer 7, and a NiGe thin film 8; or a high-melting metal thin film like a Nb thin film or a thin film made of the compound of the metal is formed further on the Ge thin film 5, or a thin film made of wiring metal like an Au thin film is further formed thereon, and then the n+-type GaAs substrate 1 is subjected to a heat treatment to form an ohmic electrode.

Inventors:

OGURA MITSUMASA
MURAKAMI MASANORI
NAKAMURA MITSUHIRO

Application Number:

JP7720198A

Publication Date:

October 08, 1999

Filing Date:

March 25, 1998

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L29/43; H01L21/28; H01L21/285; H01L29/45; (IPC1-7): H01L29/43

Attorney, Agent or Firm:

Masatomo Sugiura

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