ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS

Japanese Patent JP2022068394

A

To provide a chemically amplified resist composition that has improved lithography performance factors such as CDU, LWR and DOF and reduced defects in photolithography using high-energy radiation as the energy source, an acid diffusion inhibitor for use in the resist composition and a patterning process using the resist composition.SOLUTION: The present invention discloses an onium salt having the formula (1): wherein X is a sulfur atom or an iodine atom, n is 0 or 1, R1 is a hydrocarbyl group which may contain a fluorine atom or an oxygen atom, R2 and R3 are each independently a hydrocarbyl group which may contain a heteroatom, two of R2, R3 and Ar may bond together to form a ring with X to which they are attached, Ar is a C6-C14 arylene group which may be substituted with a predetermined substituent, Z- is a carboxylate, sulfonamide, sulfonimide or methide anion.SELECTED DRAWING: None

JP2016056168	PROCESS FOR PRODUCING SULFONIUM SALT
WO/2013/176063	CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM USING THE SAME, RESIST-COATED MASK BLANK, METHOD OF FORMING PHOTOMASK AND PATTERN, AND METHOD OF MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE
JP2018108959	METHOD FOR PRODUCING HALOGENATED SULFONIUM SALT

FUJIWARA NORIYUKI
WATANABE SATOSHI
OYAMA KOSUKE

JP2020177024A

May 10, 2022

October 22, 2020

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SHINETSU CHEMICAL CO

C07C381/12; C07C53/18; C07C59/11; C07C59/115; C07C59/13; C07C61/125; C07C63/04; C07C65/05; C07C69/753; C07C69/76; C07C305/08; C07C317/12; C07D275/06; C07D307/00; C07D321/10; C07D327/06; C07D327/08; C09K3/00; G03F7/004; G03F7/038; G03F7/039; G03F7/20

Hideaki International Patent Office

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