PURPOSE: To prevent the unstableness of sputtering caused by the generation of arc discharge, in a puttering apparatus for forming a thin film on a substrate by using a ferromagnetic body as a target, by using high frequency voltage as voltage applied to the target.
CONSTITUTION: Targets 1, 1a comprising oxide or nitride such as sintered oxide or nitride of Ni-ferrite or ba-ferrite are provided in opposed relation to each other in a vacuum tank 11 and shield rings 5, 5a are provided so as to leave slight gaps from the sputtering surfaces 4, 4a of said targes 1. 1a. Sputtering gas such as Ar is introduced into the vacuum tank 11 and high frequency voltage of 10MHz is applied between the targets and the shield rings to sputter the target material to the surface of a substrate 9 as a thin film. In this case, because applied voltage is not DC voltage and is high frequency voltage, glow discharge is not transferred to arc discharge by oxygen or nitrogen generated by the decomposition of the targets and a ferromagnetic thin film is stably formed on the substrate.
HOSHI YOUICHI
UEDA YOSHIHIKO
MUROI HIRONOBU
