PURPOSE: To reduce interference between a laser element and a driving element and realize stable driving characteristics by a method wherein a semiconductor layer, whose forbidden band width is smaller than that of an activation layer of the laser element, is provided between the two elements so as to absorb a light.
CONSTITUTION: An N-type Al0.4Ga0.6As layer 2, a P-type GaAs layer 3, an N-type Al0.4Ga0.6As layer 4, an N-type GaAs layer 5, an N-type Al0.4Ga0.6As layer 6, an I-type Al0.15Ga0.85As layer 7 and a P-type Al0.4Ga0.6As layer 8 are successively made to grow on an N+ type GaAs substrate 1 by a molecular beam epitaxial growth method. After that, utilizing a CVD-SiO2 stripe formed by photolithography as a mask, the laser part only is processed into a stripe shape by an ion milling method. Further, a P-type Al0.4Ga0.6As layer 9 and an N-type Al0.4Ga0.6As layer 10 are made to grow by a liquid phase epitaxial growth method to form a current constriction layer. After that, the semiconductor laser part is processed by mesa-etching and an AuGe electrode 11 and AgZn electrodes 12 and 13 are formed.
MORIOKA MAKOTO
MURAYAMA YOSHIMASA
SHIRAKI YASUHIRO
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