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Title:
OPTICAL PROXIMITY EFFECT CORRECTION METHOD UTILIZING PHASE-EDGE AS SUB-RESOLUTION ASSIST FEATURE
Document Type and Number:
Japanese Patent JP3939234
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a photolithography mask for optically transferring a pattern formed in the mask onto a substrate and for negating the optical proximity effects.
SOLUTION: The mask has a plurality of resolvable features to be printed on the substrate and at least one non-resolvable proximity correction feature, where the non-resolvable proximity correction feature is a phase-edge.


Inventors:
Douglas Van Den Broke
Jay Fan Chen
Application Number:
JP2002320524A
Publication Date:
July 04, 2007
Filing Date:
September 27, 2002
Export Citation:
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Assignee:
AS M Mask Tools B.V.
International Classes:
G03F1/00; H01L21/027; G03F1/26; G03F1/34; (IPC1-7): G03F1/08; H01L21/027
Domestic Patent References:
JP10326005A
JP9152708A
JP2000214572A
JP7152144A
JP9127676A
Foreign References:
US5827625
Attorney, Agent or Firm:
Yoshiyuki Inaba
Shinji Oga
Toshifumi Onuki
Hideto Asamura
Hajime Asamura
Toru Mori
Yukio Iwamoto