To improve controllability of a composition to a group V element constituting a strain compensation quantum well structure and make it possible to achieve an active layer of high gain.
An optical semiconductor device has a quantum well active layer 4 constituted by alternately laminating a compressive strain quantum well layer 4a and a tension strain barrier layer 4b whose forbidden band width is larger than the compressive strain quantum well layer 4's. Forbidden band widths of the compressive strain quantum well layer 4a and the tension strain barrier layer 4b are constant. Compressive strain is equally applied to each compressive strain quantum well layer 4a. Tensile strain in which a central portion in a thickness direction in each tensile strain barrier layer 4b is large and a portion near the compressive strain quantum well layer 4a is small is applied to each tensile strain barrier layer 4b.
| WO/2021/173370 | 3D AND LIDAR SENSING MODULES |
| JPH08340156 | SURFACE EMITTING TYPE SEMICONDUCTOR LASER |
| WO/2003/058778 | TUNABLE LASER ASSEMBLY |
ONISHI SHUNICHI
UEDA TETSUZO
| JPH09162482A | 1997-06-20 | |||
| JPH10270787A | 1998-10-09 | |||
| JPH09312438A | 1997-12-02 |
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Seki Kei
Yasuya Sugiura