PURPOSE: To obtain an optical semiconductor element in which its wavelength characteristic is linearly varied by linearly forming the lattice of diffraction grating not in parallel, and setting intervals between a line perpendicular to one lattice of reference and crossing points of the lattices equally.
CONSTITUTION: When a light propagated in a semiconductor layer is coupled with a diffraction grating, a light of wavelength of λs = 2.m.n.d (wherein m: natural number, n: effective refractive index of medium, d: period of lattice). Accordingly, when the lattices of the diffraction grating are set not parallel and linearly varied, the period (d) of the lattice is linearly varied. Then, arbitrary one of the formed lattices is considered to be a reference lattice 3, and lines 1, 2 perpendicular thereto are separated at 1 mm. At this time, the interval between a perpendicular line 1 and the crossing points of the lattices are set to 240 nm, and the intervals between a perpendicular line 2 and the crossing points of the lattices are set to 238 nm to be linearly formed. Accordingly, elements are formed at an equal interval in parallel with the lines 1, 2, and when the interval between the elements is set to 500μm, the period of the lattices to be coupled with the elements is varied by 1 mm at an equal interval.
OKAI MAKOTO
TSUJI SHINJI
HIRAO MOTONAO
MATSUMURA HIROYOSHI
HARADA TATSUO
| JPS5994486A | 1984-05-31 | |||
| JPS5456385A | 1979-05-07 |