Title:
OPTICAL SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3189880
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain an optical module wherein the numbers of components and the manhour of assembly are reduced, by arranging a gain region and a monitor region which is arranged in the vicinity of a light output end of a mode conversion region and monitors light intensity by absorbing a part of light by applying a reverse bias, in one element.
SOLUTION: A diffraction grating 15 is partially formed on a substrate 1 as a first conductivity type compound semiconductor, and a growth stopper mask 21 which is a pair of SiO2 stripe masks in a direction is formed. A specified aperture part 31 is formed in the growth stopper mask 21 and is subjected to selective organic metal vapor growth. A gain region generating optical gain which is caused by introducing a current into a quantum well active layer 3, and a mode conversion region relieving the degree of light confinement in a waveguide path containing a clad layer 4 are formed. In the vicinity of the output end of light in the mode conversion region, a monitor region monitoring light intensity by absorbing a part of light by applying a reverse bias is formed. The gain region, the mode conversion region and the monitor region are arranged in one element.
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Inventors:
Yoshihiro Sasaki
Application Number:
JP21635797A
Publication Date:
July 16, 2001
Filing Date:
August 11, 1997
Export Citation:
Assignee:
NEC
International Classes:
G02B6/14; H01S5/00; H01S5/026; (IPC1-7): H01S5/026; G02B6/14
Domestic Patent References:
| JP9116235A | ||||
| JP8125279A | ||||
| JP7283490A | ||||
| JP433386A | ||||
| JP2299282A | ||||
| JP837341A | ||||
| JP8116124A |
Attorney, Agent or Firm:
Yosuke Goto (1 person outside)