Title:
OPTICAL WAVEGUIDE DEVICE
Document Type and Number:
Japanese Patent JP3275888
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent the degradation in dimensional accuracy and production yield which occurs in poor flatness as the degradation occurs if an antistatic film is manufactured by a photolithography method adjacently to buffer layers in order to improve the characteristics of an optical waveguide device.
SOLUTION: Waveguides 2 are formed on an LiNbO3 substrate 1 and after an SiO2 film is formed thereon, the film is formed to required patterns, by which the buffer layers 3 are formed. Terrace structures 6G are formed between the buffer layer 3 simultaneously therewith. Further, the antistatic film 5 is formed over the entire surface and a photoresist mask is formed thereon. The antistatic film is formed to the required patterns by utilizing this photoresist mask. Further, control electrodes 4 are formed on the buffer layers 3. The planatarization of the surface of the antistatic film 5 is made possible by the terrace structures 6G and the execution of the pattern formation by the photoresist mask with high accuracy is made possible.
Inventors:
Toshiyuki Kobe
Application Number:
JP24546699A
Publication Date:
April 22, 2002
Filing Date:
July 10, 1996
Export Citation:
Assignee:
NEC
International Classes:
G02F1/035; (IPC1-7): G02F1/035
Domestic Patent References:
| JP784228A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)