Title:
OPTIMUM GATE CONTROL DESIGN FOR SIDE FIELD EMISSION ELEMENT AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3266503
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain an optimum trade-off between control and emission current, and provide a field emission element having an improved mutual conductance by positioning a gate edge in almost the central point between the tip of a cathode emitter and an anode.
SOLUTION: In a side field emission element 10, an electron emitter electrode member 30 made of a thin film of tungsten or the like is laterally arranged to the upper surface 25 of a substrate 20 made of glass or the like. A first insulating layer 40 containing an oxide such as silicon dioxide separates a gate member 50 containing conductive metal such as tungsten from the member 30, especially from its tip. A passive layer 95 made of silicon dioxide having sufficient thickness is attached onto the member 30 in order to protect other circuits. In the case that a gap between a cathode 70 made of tungsten or the like and the gate and a gap between the cathode 70 and the emitter are expressed by (y) and (x) respectively, when (y) is almost 1/2 of (x), an optimum trade-off between gate control and an electric field is obtained.
Inventors:
Jack Alan Mandelman
Michael david potter
Michael david potter
Application Number:
JP12120196A
Publication Date:
March 18, 2002
Filing Date:
May 16, 1996
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01J9/02; H01J1/304; H01J3/02; (IPC1-7): H01J1/30; H01J9/02
Domestic Patent References:
| JP5174703A | ||||
| JP4212236A | ||||
| JP745181A | ||||
| JP5182581A |
Attorney, Agent or Firm:
Hiroshi Sakaguchi (1 person outside)
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