To achieve simultaneously both an improvement in the efficiency of an optoelectric transducer and an enhancement in a productivity.

A semiconductor layer containing a first crystal region and a second crystal region growing towards the film-forming direction of a film is formed between an impurity semiconductor layer doped with one conductivity type impurity element and an impurity semiconductor layer doped with a conductivity type impurity element reverse to one conductivity type. The first crystal region is grown from an interface with one impurity semiconductor layer, and the second crystal region is grown towards the interface with the other impurity semiconductor layer from a position separated from the interface with one impurity semiconductor layer. The main section of a region conducting a photoelectric conversion is configured of the semiconductor layer containing the first crystal region and the second crystal region existing in an amorphous structure.