Title:
Organic field effect transistor
Document Type and Number:
Japanese Patent JP6157497
Kind Code:
B2
Abstract:
The present invention provides an electronic component or device comprising a gate electrode, a source electrode and a drain electrode, wherein said component or device further comprising an organic semiconducting (OSC) material that is provided between the source and drain electrode, wherein the OSC material comprises (a) a polymer represented by formula: (I), and (b) a compound of formula (II). High quality OFETs can be fabricated by the choice of a semiconductor material, which is comprised of a polymer represented by formula I and (b) a compound of formula II.
Inventors:
Patrice Bujar
Natalia Chebotareva
Thomas Weiz
Pascal Ayo
Natalia Chebotareva
Thomas Weiz
Pascal Ayo
Application Number:
JP2014545196A
Publication Date:
July 05, 2017
Filing Date:
December 03, 2012
Export Citation:
Assignee:
BASF SE
International Classes:
H01L51/30; C07D487/04; C08G61/12; H01L29/786; H01L51/05; H01L51/40
Domestic Patent References:
| JP2011501743A | ||||
| JP2009135422A | ||||
| JP2009541548A |
Foreign References:
| WO2010136353A1 | ||||
| WO2011144566A1 | ||||
| WO2010108873A1 |
Attorney, Agent or Firm:
Einzel Felix-Reinhard
Takuya Kuno
Takuya Kuno
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