To produce an organic material for semiconductor interlayer insulation film, and a semiconductor interlayer insulation film, in which dielectric constant is lowered to a desired level by employing an organic material foamed by adding a foaming agent for forming the semiconductor interlayer insulation film.

The organic material for forming a semiconductor interlayer insulation film is produced by adding a foaming agent and forming the organic material. The foaming agent is an azobis compound represented by a formula (X)3CN=NC(Y)3. In the formula, X and Y represents, independently, any one kind selected from a group of hydrogen atom, alkyl group, alkenyl group, cyano group phenyl group, amino group, nitro group, sulfuryl group, halogen and derivatives thereof. Three X and Y groups are not required to be same group. Two or three X and Y groups may be bonded at the ends into cyclic or polycyclic structure. According to the structure, dielectric constant of organic material film can be lowered furthermore.