Title:
ORGANIC METAL RAW MATERIAL, FILM-FORMING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2009129964
Kind Code:
A
Abstract:
To provide a film formation method capable of improving film quality by reducing the number of particles in the film formed by vapor phase growth method by using an organic metal compound for a raw material.
The film formation method includes: a process for vaporizing at least one organic metal raw material consisting of solution where the organic metal compound is dissolved to an organic solvent having a moisture content of not more than 1.0 mass% and preferably not more than 0.8 mass%; and a process for forming a film including metal on a substrate by performing vapor phase growth of the vaporized organic metal raw material. Thus the generation of particles can be suppressed.
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Inventors:
Nakabayashi, Masaaki
Application Number:
JP2007000300401
Publication Date:
June 11, 2009
Filing Date:
November 20, 2007
Export Citation:
Assignee:
FUJITSU MICROELECTRONICS LTD
International Classes:
H01L21/316; C23C16/40; H01L21/31; H01L21/02; C23C16/40